document number: 93678 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 15-may-08 1 inverter grade thyristors (hockey puk version), 720 a st333c..c series vishay high power products features ? metal case with ceramic insulator ? all diffused design ? center amplifying gate ? guaranteed high dv/dt ? guaranteed high di/dt ? international standard case to-200ab (e-puk) ? high surge current capability ? low thermal impedance ? high speed performance ? lead (pb)-free typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters electrical specifications product summary i t(av) 720 a to-200ab (e-puk) rohs compliant major ratings and characteristics parameter test conditions values units i t(av) 720 a t hs 55 c i t(rms) 1435 a t hs 25 c i tsm 50 hz 11 000 a 60 hz 11 500 i 2 t 50 hz 605 ka 2 s 60 hz 553 v drm /v rrm 400 to 800 v t q range 10 to 30 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma st333c..c 04 400 500 50 08 800 900
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93678 2 revision: 15-may-08 st333c..c series vishay high power products inverter grade thyristors (hockey puk version), 720 a current carrying capability frequency units 50 hz 1630 1420 2520 2260 7610 6820 a 400 hz 1630 1390 2670 2330 4080 3600 1000 hz 1350 1090 2440 2120 2420 2100 2500 hz 720 550 1450 1220 1230 1027 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s heatsink temperature 40 55 40 55 40 55 c equivalent values for rc circuit 10/0.47 10/0.47 10/0.47 /f on-state conduction parameter symbol test conditions values units maximum average on-state current at heatsink temperature i t(av) 180 conduction, half sine wave double side (single side) cooled 720 (350) a 55 (75) c maximum rms on-state current i t(rms) dc at 25 c heatsink te mperature double side cooled 1435 a maximum peak, one half cycle, non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 11 000 t = 8.3 ms 11 500 t = 10 ms 100 % v rrm reapplied 9250 t = 8.3 ms 9700 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 605 ka 2 s t = 8.3 ms 553 t = 10 ms 100 % v rrm reapplied 428 t = 8.3 ms 391 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 6050 ka 2 s maximum peak on-state voltage v tm i tm = 1810 a, t j = t j maximum, t p = 10 ms sine wave pulse 1.96 v low level value of threshold voltage v t(to)1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.91 high level value of threshold voltage v t(to)2 (i > x i t(av) ), t j = t j maximum 0.93 low level value of forward slope resistance r t1 (16.7 % x x i t(av) < i < x i t(av) ), t j = t j maximum 0.58 m high level value of fo rward slope resistance r t2 (i > x i t(av) ), t j = t j maximum 0.58 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latching current i l t j = 25 c, v a = 12 v, r a = 6 , i g = 1 a 1000 switching parameter symbol test conditions values units min. max. maximum non-repetitive rate of rise of turned on current di/dt t j = t j maximum, v drm = rated v drm ; i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s resistive load, gate pulse: 10 v, 5 source 1.1 s maximum turn-off time t q t j = t j maximum, i tm = 550 a, commutating di/dt = 40 a/s v r = 50 v, t p = 500 s, dv/dt: see table in device code 10 30 180 el i tm 180 el i tm 100 s i tm
document number: 93678 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 15-may-08 3 st333c..c series inverter grade thyristors (hockey puk version), 720 a vishay high power products note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at diffe rent conduction angles than dc blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 50 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positive gate current i gm t j = t j maximum, t p 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate currrent required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 200 ma maximum dc gate voltage required to trigger v gt 3v maximum dc gate current not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistanc e, junction to heatsink r thj-hs dc operation single side cooled 0.09 k/w dc operation double side cooled 0.04 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.020 dc operation double side cooled 0.010 mounting force, 10 % 9800 (1000) n (kg) approximate weight 83 g case style see dimensions - link at the end of datasheet to-200ab (e-puk) r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.010 0.011 0.007 0.007 t j = t j maximum k/w 120 0.012 0.012 0.012 0.013 90 0.015 0.015 0.016 0.017 60 0.022 0.022 0.023 0.023 30 0.036 0.036 0.036 0.037
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93678 4 revision: 15-may-08 st333c..c series vishay high power products inverter grade thyristors (hockey puk version), 720 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - current ratings characteristics fig. 4 - current ratings characteristics fig. 5 - on-state power loss characteristics fig. 6 - on-state power loss characteristics 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 30 60 90 120 180 average on-state current (a) conduction angle maximum allowable heatsink temperature (c) st333c..c series (single side cooled) r (d c ) = 0 .09 k /w th j- hs 20 30 40 50 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 700 800 900 dc 30 60 90 120 180 a ve ra g e o n -sta te c urre nt (a ) cond uction p eriod maximum allowable heatsink tem perature (c) st333c ..c series (single side c oo led) r ( d c) = 0 .09 k/w th j-hs 10 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 60 0 80 0 1 000 30 60 90 120 180 average o n-state c urrent (a) conduction angle maximum allowable heatsink temperature (c) st333 c..c series (d o uble side c oo le d) r (d c ) = 0.04 k/w thj-h s 20 30 40 50 60 70 80 90 100 110 120 130 0 200 400 600 800 1000 1200 1400 1600 dc 30 60 90 120 180 average on-state current (a) conduction period maximum allowable heatsink temperature (c) st333c..c series ( double side cooled ) r (dc) = 0.04 k/w th j-h s 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 200 400 600 800 1000 180 120 90 60 30 rms limit conduction angle maximum average on-state power loss (w) average o n-state c urren t (a) st333 c ..c s erie s t = 125c j 0 200 400 600 800 100 0 120 0 140 0 160 0 180 0 200 0 220 0 240 0 260 0 0 200 400 600 800 1000 1200 1400 1600 dc 180 120 90 60 30 rms limit conduction period m axim um average on-state pow er loss (w ) average o n-state c urren t (a) st333c..c series t = 125c j
document number: 93678 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 15-may-08 5 st333c..c series inverter grade thyristors (hockey puk version), 720 a vishay high power products fig. 7 - maximum non-repetitive surge current single and double side cooled fig. 8 - maximum non-repetitive surge current single and double side cooled fig. 9 - on-state voltage drop characteristics fig. 10 - thermal impedance z thj-hs characteristics fig. 11 - reverse recover ed charge characteristics fig. 12 - reverse recovery current characteristics 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 0 0 1 0 1 1 number of equal amplitude half cycle current pulses (n) at an y rated l oad con dition and w ith rated v applied following surge. rr m peak half sine wave on-state current (a) in it i a l t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st333c..c serie s 4000 5000 6000 7000 8000 9000 10000 11000 12000 0.01 0.1 1 pulse t rain duration (s) maxim um non repetitive surge current versus pulse train duration. c ontrol of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied rr m j st333c..c serie s 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6. 5 t = 25c j instantaneous on-state current (a) instan tan eous o n-state v oltage (v) t = 125c j st3 33c ..c serie s 0.001 0.01 0.1 0.001 0.01 0.1 1 10 s q u a re w a v e p u ls e d ur a t io n ( s ) thj-hs tran sient therm al im peda nce z (k/w ) st333c ..c series steady state value r = 0 .0 9 k /w (sin gle side c oo le d) r = 0 .0 4 k /w (d o uble side c o ole d) (d c ope ratio n) th j - h s thj-h s 80 100 120 140 160 180 200 220 240 260 280 300 320 10 20 30 40 50 60 70 80 90 100 i = 500 a 300 a 200 a 100 a 50 a rate of fall of on-state current - di/dt (a/s) maximum reverse recovery charge - qrr (c) tm st333c..c series t = 125 c j 20 40 60 80 100 120 140 160 180 10 20 30 40 50 60 70 80 90 100 m ax im um reve rse rec ove ry c urren t - irr (a ) ra te o f fa ll o f fo rw a rd c urren t - d i/d t (a /s) i = 5 00 a 300 a 200 a 100 a 50 a tm st333c ..c series t = 125 c j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93678 6 revision: 15-may-08 st333c..c series vishay high power products inverter grade thyristors (hockey puk version), 720 a fig. 13 - frequency characteristics fig. 14 - frequency characteristics fig. 15 - frequency characteristics 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse basewidth (s) peak o n-state current (a) 1000 1500 3000 200 500 5000 st333c..c series sinusoidal pulse t = 40c c snubb er circuit r = 10 ohms c = 0.47 f v = 80% v s s d drm tp 1e1 1e2 1e3 1e4 50 hz 400 2500 100 pulse b a sew id th (s) 1000 150 0 3000 200 50 0 5000 st333c..c series sinusoidal pulse t = 55c c snubb er circuit r = 10 ohms c = 0.47 f v = 80% v s s d drm tp 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 100 100 0 1500 200 0 200 500 pulse basewidth (s) peak on-state c urrent (a) st333c..c series trap ezoid al p ulse t = 40c di/dt = 50a/s 3000 snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d drm c t p 5000 1e11e21e31e4 50 hz 400 100 pulse basewidth (s) 10 00 1500 20 00 200 500 2500 snubber circuit r = 10 ohms c = 0.47 f v = 80% v drm s s d st333c..c series tra p ezo id a l p uls e t = 55c di/dt = 100a/s c 3000 50 00 t p 1e2 1e3 1e4 1e1 1e2 1e3 1e4 50 hz 400 2500 10 0 100 0 1500 2000 3000 200 500 pulse b asew id th (s) p ea k o n-sta te curre nt (a ) st333c..c series trapezoidal pulse t = 40c d i/dt = 100a/s snubb er circuit r = 10 ohms c = 0.47 f v = 80% v s s d drm c 5000 t p 1e1 1e 2 1e3 1e4 50 hz 400 100 pulse basew idth (s) 100 0 1500 20 00 200 500 st333c..c series tra p ezo id a l p uls e t = 55c di/dt = 100a/s c 2500 snubber circuit r = 10 ohms c = 0.47 f v = 80% v s s d dr m t p 3000 5000
document number: 93678 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 15-may-08 7 st333c..c series inverter grade thyristors (hockey puk version), 720 a vishay high power products fig. 16 - maximum on-state ener gy power loss characteristics fig. 17 - gate characteristics 1e1 1e2 1e3 1e4 1e1 1e2 1e3 1e4 pulse basewidth (s) 20 joule s pe r p ulse 2 1 0.5 0.3 0.2 10 5 peak on-state current (a) 3 st333c ..c se ries sinusoidal pulse tp 1e4 1e1 1e2 1e3 1e4 pulse basew idth (s) 20 joules per pulse 2 1 0.5 0.3 0.2 10 3 st3 33 c s e ries rec ta ng ula r p uls e di/dt = 50a/s 0.4 t p 5 0.1 1 10 100 0.001 0.0 1 0.1 1 1 0 100 vgd ig d (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) insta nta ne ous g ate c urrent (a ) insta nta n eous g ate vo lta ge (v) rectangular gate pulse a ) r e c o m m e n d e d lo a d lin e fo r b ) re c o m m e n d e d lo a d lin e f o r <=30% rated di/dt : 10v, 10ohms rated di/dt : 20v , 10ohm s; tr<=1 s tr<=1 s (1) pgm = 1 0w , tp = 20 m s (2) pgm = 2 0w , tp = 10 m s (3) pgm = 4 0w , tp = 5m s (4) pgm = 6 0w, tp = 3.3m s (3 ) de vice : st333c ..c se rie s frequen cy lim ite d by pg(a v ) (4)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93678 8 revision: 15-may-08 st333c..c series vishay high power products inverter grade thyristors (hockey puk version), 720 a ordering information table 3 = fast-on term. (gate and aux. cathode soldered leads) 1 - thyristor 2 - essential part number 3 - 3 = fast turn off 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 10 6 - c = puk case to-200ab (e-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 - 0 = eyelet term. (gate and aux. cathode unsoldered leads) 1 = fast-on term. (gate and aux. cathode unsoldered leads) 2 = eyelet term. (gate and aux. cathode soldered leads) - critical dv/dt: none = 500 v/s (standard value) l = 1000 v/s (special selection) * standard part number. all other types available only on request. t q (s) dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 10 cn dn en -- -- 12 cm dm em fm* -- 15 cl dl el fl* hl 18 cp dp ep fp hp 20 ck dk ek fk hk 25 -- -- -- fj hj 30 -- -- -- -- hh device code 5 1 3 24 678910 st 33 3 c 08 c h k 1 - links to related documents dimensions http://www.vishay.com/doc?95075
document number: 95075 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (e-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 0.3 (0.01) min. 0.3 (0.01) min. 25.3 (0.99) dia. max. 14.1/15.1 (0.56/0.59) 25 5 25.3 (0.99) dia. max. 40.5 (1.59) dia. max. 42 (1.65) max. anode to gate creepage distance: 11.18 (0.44) minimum strike distance: 7.62 (0.30) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) gate terminal for 1.47 (0.06) dia. pin receptacle 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
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